Dodatne informacije

• Lični podaci

• Datum rođenja: 20.09.1950
• Mesto rođenja: Niš

• Obrazovanje

• Fakultet: Elektronski fakultet u Nišu
• Odsek / Grupa / Smer: Elektronske komponente
• Godina diplomiranja: 1974

• Spisak publikacija

• Monografije i poglavlja u monografijama:

  Z. Stamenković and N. Stojadinović, "Computer-Aided Analysis and Forecast of Integrated Circuit Yield", in "The Computer Engineering Handbook", edited by V. Oklobžija, CRC Press, Boca Raton, pp. 47.1-47.24 (2001) ISBN-10: 0849308852 ISBN-13: 978-0849308857 http://www.amazon.com/Computer-Engineering-Handbook-2e/dp/0849308852

  
  

  Z. Stamenković and N. Stojadinović, "Computer-Aided Analysis and Forecast of Integrated Circuit Yield", in "Digital Design and Fabrication", edited by V. Oklobžija, CRC Press, Boca Raton, pp. 24.1-24.24  (2007)  Print ISBN: 978-0-8493-8602-2,  eBook ISBN: 978-0-8493-8604-6 http://www.crcnetbase.com/doi/abs/10.1201/9780849386046.ch24       

  
  

  D. Danković, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, and N. Stojadinović, "Implications of Negative BiasTemperature Instability in Power MOS Transistors " in Micro Electronic and Mechanical Systems, ISBN: 978-953-307-027-8, edited by Kenichi Takahata, IN-TECH Press, Boca Raton, pp. 19.319-19.342 (2009), http://www.intechopen.com/books/show/title/micro-electronic-and-mechanical-systems

  
  

  N. Stojadinović, I. Manić, D. Danković, S. Djorić-Veljković, V. Davidović, A. Prijić, S. Golubović, and, Z. Prijić, "Negative Bias Temperature Instability in Thick Gate Oxides for Power MOS Transistors" in Bias Temperature Instability for Devices and Circuits, edited by Tibor Grasser, Springer Science+Business Media New York, pp. 533-559 (2014) ISBN: 978-1-4614-7908-6 (Print) 978-1-4614-7909-3 DOI 10.1007/978-1-4614-7909-3

  
  

   

  
  

   

• Radovi u časopisima sa IMPACT faktorom:

  N. Stojadinović, "A New Analytical Expression for the Impurity Profile of Hyperabrupt Varicap Diodes", Physica Status Solidi (a), vol. 43, pp. K91-94 (1977) ISSN: 0031-8965, DOI: 10.1002/pssa.2210430164, http://onlinelibrary.wiley.com/doi/10.1002/pssa.2210430164/abstract                        

  
  

  N.D. Stojadinović and S.D. Ristić, "Effects of Emitter Diffusion-Induced Stresses on Common-Emitter Current Gain of Silicon Planar Transistors", Physica Status Solidi (a), vol. 51, pp. K83-88 (1979) ISSN: 0031-8965,  DOI: 10.1002/pssa.2210510155, http://onlinelibrary.wiley.com/doi/10.1002/pssa.2210510155/abstract                        

  
  

  R.S. Popović and N.D. Stojadinović, "Dependence of Dislocations on Emitter Phosphorus Diffusion Conditions and Their Effects on Electrical Characteristics of Silicon Planar NPN Transistors", Physica Status Solidi (a), vol. 52, pp. 433-440 (1979) ISSN: 0031-8965,  DOI: 10.1002/pssa.2210520210, http://onlinelibrary.wiley.com/doi/10.1002/pssa.2210520210/abstract                        

  
  

  N.D. Stojadinović, "Effects of Emitter Edge Dislocations on the Low-Frequency Noise of Silicon Planar n-p-n Transistors", Electronics Letters, vol. 15, pp. 340-343 (1979) ISSN: 0013-5194,  DOI: 10.1049/el:20020281, http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=15&Issue=12

  
  

  N.D. Stojadinović, "Conditions for the Creation of Dislocations by Diffusion of Phosphorus into Silicon", Physica Status Solidi (a), vol. 54, pp. K5-10 (1979) ISSN: 0031-8965,  DOI: 10.1002/pssa.2210540156, http://onlinelibrary.wiley.com/doi/10.1002/pssa.2210540156/abstract

  
  

  N.D. Stojadinović and R.S. Popović, "A New Method for Elimination of Emitter Edge Dislocations of Silicon Planar NPN Transistors", Physica Status Solidi (a), vol. 55, pp. 307-313 (1979) ISSN: 0031-8965,  DOI: 10.1002/pssa.2210550135, http://onlinelibrary.wiley.com/doi/10.1002/pssa.2210550135/abstract

  
  

  N.D. Stojadinović, "Emitter Diffusion-Induced Stress Effect on Common-Emitter Current Gain of Silicon Planar Transistors", Physica Status Solidi (a), vol. 55, pp. K89-93, (1979) ISSN: 0031-8965,  DOI: 10.1002/pssa.2210550161, http://onlinelibrary.wiley.com/doi/10.1002/pssa.2210550161/abstract

  
  

  N.D. Stojadinović and R.S. Popović, "Elimination of Emitter Edge Dislocations in Silicon Planar n-p-n Transistors", Electronics Letters, vol. 16, pp. 842-843 (1980) ISSN: 0013-5194,  DOI: 10.1049/el:20020281, http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=16&Issue=22

  
  

  N.D. Stojadinović, Lj.Dj. Ristić and B.V. Vidanović, "New Technique for Fabrication of Low-Voltage Si Zener Diodes", Electonics Letters,vol. 17, pp. 130-132 (1981) ISSN: 0013-5194,  DOI: 10.1049/el:20020281, http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=17&Issue=3

  
  

  N.D. Stojadinović, "Influence of Emitter Edge Dislocations on Reliability of Planar NPN Transistors", Microelectronics and Reliability, vol. 22, pp. 1113-1120 (1982). ISSN 0026-2714,  DOI: 10.1016/S0026-2714(82)80564-7, http://www.sciencedirect.com/science/article/pii/S0026271482805647

  
  

  N.D. Stojadinović and S.D. Ristić, "Failure Physics of Integrated Circuits and Relationship to Reliability", Physica Status Solidi (a), vol. 75, pp. 11-48 (1983) (review paper) ISSN: 0031-8965,  DOI: 10.1002/pssa.2210750102, http://onlinelibrary.wiley.com/doi/10.1002/pssa.2210750102/abstract

  
  

  N. Stojadinović, S. Dimitrijev, S. Mijalković and Z. Živić, "Reliability of N-channel and P-channel MOSTs in CMOS Integrated Circuits", Physica Status Solidi (a), vol. 76, pp 357-364 (1983)  ISSN: 0031-8965,  DOI: 10.1002/pssa.2210760143, http://onlinelibrary.wiley.com/doi/10.1002/pssa.2210760143/abstract

  
  

  N. Stojadinović, "Failure Physics of Integrated Circuits - A Review", Microelectronics and Reliability, vol. 23, pp. 609-707 (1983) (review paper) ISSN 0026-2714,  DOI: 10.1016/0026-2714(83)91158-7, http://www.sciencedirect.com/science/article/pii/0026271483911587

  
  

  N. Stojadinović, "Effects of Accelerated Temperature Testing on the Low-Frequency Noise of Planar NPN Transistors", Microelectronics and Reliability, vol. 23, pp. 899-901 (1983) ISSN 0026-2714,  DOI: 10.1016/0026-2714(83)91017-X, http://www.sciencedirect.com/science/article/pii/002627148391017X

  
  

  Z. Živić, A. Živić and N. Stojadinović, "A New CMOS IC Structure and its Characterization", Microelectronics and Reliability, vol. 25, no. 1, pp. 123-146 (1985) ISSN 0026-2714, DOI 0026-2714(85)90453-6,         http://www.sciencedirect.com/science/article/pii/0026271485904536

  
  

  N. Stojadinović, S. Dimitrijev and S. Mijalković, "Effects of High Field Stresses on Threshold Voltage of CMOS Transistors", Microelectronics and Reliability, vol. 25, no. 2, pp. 275-279 (1985) ISSN 0026-2714,  DOI 10.1016/0026-2714(85)90013-7,      http://www.sciencedirect.com/science/article/pii/0026271485900137

  
  

  S. Dimitrijev and N. Stojadinović, "Analysis of CMOS Transistor Instabilities", Solid-State Electronics, vol. 30, pp. 991-1003 (1987)  ISSN: 0038-1101,  DOI: 10.1016/0038-1101(87)90090-6, http://www.sciencedirect.com/science/article/pii/0038110187900906 

  
  

  S. Dimitrijev, D. Župac and N. Stojadinović, "New Analytical Expression for the Drain Current of Short-Channel MOS Transistors in the Triode Region", Electronics Letters, vol. 23, pp. 862-864 (1987) ISSN: 0013-5194,  DOI: 10.1049/el:20020281, http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=23&Issue=16 

  
  

  S. Dimitrijev, D. Župac and N. Stojadinović, "Mechanisms of Positive-Gate Bias Stress Induced Instabilities in CMOS Transistors", Microelectronics and Reliability, vol. 27, no. 6, pp. 1001-1016 (1987) ISSN 0026-2714,  DOI 10.1016/0026-2714(87)90762-1,          http://www.sciencedirect.com/science/article/pii/0026271487907621

  
  

  S. Dimitrijev, N. Stojadinović and Z. Stamenković, "Yield Model for In-Line Integrated Circuit Production Control", Solid-State Electronics, vol. 31, no. 5, pp. 975-979 (1988) ISSN: 0038-1101,  DOI: 10.1016/0038-1101(88)90054-8, http://www.sciencedirect.com/science/article/pii/0038110188900548 

  
  

  B. Pešić, S. Dimitrijev and N. Stojadinović, "Sudden Failures Associated with the Gate Oxide of CMOS Transistors", Microelectronics and Reliability, vol. 28, no. 4, pp. 643-648 (1988) ISSN 0026-2714,  DOI 10.1016/0026-2714(88)90150-3,         http://www.sciencedirect.com/science/article/pii/0026271488901503 

  
  

  S. Mijalković and N. Stojadinović, "Efficient Simulation of Impurity Redistribution in VLSI Fabrication Processes", Solid-State Electronics, vol. 31, no. 12, pp. 1689-1693 (1988) ISSN: 0038-1101,  DOI: 10.1016/0038-1101(88)90065-2, http://www.sciencedirect.com/science/article/pii/0038110188900652  

  
  

  N. Stojadinović and S. Dimitrijev, "Instabilities in MOS Transistors", Microelectronics and Reliability, vol. 29, no. 3, pp. 371-380 (1989) (review paper), ISSN: 0026-2714,  DOI: 10.1016/0026-2714(89)90623-9, http://www.sciencedirect.com/science/article/pii/0026271489906239 

  
  

  S. Dimitrijev, S. Golubović, D. Župac, M. Pejović and N.Stojadinović, "Analysis of Gamma-Radiation Induced Instability Mechanisms of CMOS Transistors", Solid-State Electronics, vol. 32, no. 5, pp. 349-353 (1989) ISSN: 0038-1101,  DOI: 10.1016/0038-1101(89)90122-6, http://www.sciencedirect.com/science/article/pii/0038110189901226 

  
  

  B. Pešić, S. Dimitrijev and N. Stojadinović, "Investigation of Gate Oxide Breakdown in CMOS Integrated Circuits", Microelectronics Journal, vol. 20, no. 6, pp. 19-26 (1989) ISSN: 0026-2692,  DOI: 10.1016/0026-2692(89)90064-5, http://www.sciencedirect.com/science/article/pii/0026269289900645  

  
  

  D. Pantić, S. Mijalković and N. Stojadinović, "A New Multilayer Ion Implantation Model for Process Simulation", Microelectronics Journal, vol. 20, no. 6, pp. 5-10 (1989) ISSN: 0026-2692,  DOI: 10.1016/0026-2692(89)90062-1, http://www.sciencedirect.com/science/article/pii/0026269289900621 

  
  

  Z. Prijić, S. Dimitrijev and N. Stojadinović, "Analysis of Temperature Dependence of CMOS Transistors Threshold Voltage", Microelectronics and Reliability, vol. 31, pp. 33-37 (1991) ISSN: 0026-2714,  DOI: 10.1016/0026-2714(91)90342-5, http://www.sciencedirect.com/science/article/pii/0026271491903425

  
  

  S. Mijalković, D. Pantić, Z. Prijić, S. Mitrović and N.Stojadinović, "MUSIC - A Multigrid Simulator for IC Fabrication Processes", COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, vol. 10, pp. 599-610 (1991) ISSN: 0026-2714, DOI: 10.1108/eb051734,   http://www.emeraldinsight.com/journals.htm?articleid=1672850&show=abstract

  
  

  L. Lukasiak, B. Majkusiak, A. Jakubowski, S. Dimitrijev and N.Stojadinović, "A Review of Long-Channel MOS Transistor Models", Microelectronics Journal, vol. 22, no. 2, pp. 55-88 (1991) (review paper) ISSN: 0026-2692,  DOI: 10.1016/0026-2692(91)90025-I, http://www.sciencedirect.com/science/article/pii/002626929190025I

  
  

  D. Petković and N. Stojadinović, "Polycristalline Silicon Thin Film Resistors with Irreversible Resistance Transition", Microelectronics Journal, vol. 23, no. 1, pp. 51-58 (1992) ISSN: 0026-2692,  DOI: 10.1016/0026-2692(92)90096-J, http://www.sciencedirect.com/science/article/pii/002626929290096J 

  
  

  S. Golubović, M. Pejović, S. Dimitrijev and N. Stojadinović, "UV-Radiation Annealing of the Electron- and X-Irradiation Damaged CMOS Transistors", Physica Status Solidi (a), vol. 129, pp. 569-575 (1992) )  ISSN: 0031-8965,  DOI: 10.1002/pssa.2211290227, http://onlinelibrary.wiley.com/doi/10.1002/pssa.2211290227/abstract

  
  

  Z. Stamenković and N. Stojadinović, "New Defect Size Distribution Function for Estimation of Chip Critical Area in Integrated Circuit Yield Models", Electronics Letters, vol. 28, pp. 528-530 (1992) ISSN: 0013-5194,  DOI: 10.1049/el:20020281, http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=28&Issue=6

  
  

  Z. Stamenković and N. Stojadinović, "Chip Yield Modelling Related to Photolithographic Defects", Microelectronics and Reliability, vol. 32, pp. 663-668 (1992) ISSN: 0026-2714,  DOI: 10.1016/0026-2714(92)90623-S, http://www.sciencedirect.com/science/article/pii/002627149290623S 

  
  

  Z.D. Prijić, S.S. Dimitrijev and N. Stojadinović, "The Determination of Zero-Temperature-Coefficient Point in CMOS Transistors", Microelectronics and Reliability, vol. 32, pp. 769-773 (1992) ISSN 0026-2714,  DOI: 10.1016/0026-2714(92)90041-I,         http://www.sciencedirect.com/science/article/pii/002627149290041I

  
  

  D. Pantić, S. Mijalković and N. Stojadinović, "The Efficient Simulation of Point Defects Diffusion by an Adaptive Multigrid Method", Microelectronic Engineering, vol. 19, pp. 789-794 (1992) ISSN: 0167-9317,  DOI: 10.1016/0167-9317(92)90546-4, http://www.sciencedirect.com/science/article/pii/0167931792905464

  
  

  Z. Pavlović, Z. Prijić, S. Ristić and N. Stojadinović, "Temperature Dependence of ON-Resistance in Low-Voltage Power VDMOS Transistors", Microelectronics Journal, vol. 24, no. , pp. 115-124 (1993) ISSN 0026-2692, DOI: 10.1016/0026-2692(93)90106-O, http://www.sciencedirect.com/science/article/pii/002626929390106O 

  
  

  T. Brozek, B. Pešić, A. Jakubowski and N. Stojadinović, "Breakdown Properties of Thin Oxides in Irradiated MOS Capacitors", Microelectronics and Reliability, vol. 33, pp. 649-657 (1993) ISSN: 0026-2714,  DOI: 10.1016/0026-2714(93)90271-Y,           http://www.sciencedirect.com/science/journal/00262714/33/5 

  
  

  Z. Prijić, Z. Pavlović, S. Ristić and N. Stojadinović, "Zero-Temperature Coefficient (ZTC) Biasing of Power VDMOS Transistor", Electronics Letters, vol. 29, pp. 435-437 (1993) ISSN: 0013-5194,  DOI: 10.1049/el:20020281, http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=29&Issue=5

  
  

  Z. Stamenković, S. Dimitrijev and N. Stojadinović, "Integrated Circuit Production Yield Assurance Based on Yield Analysis", Microelectronics Journal, vol. 24, no. 7, pp. 819-822 (1993) ISSN: 0026-2692, DOI: 10.1016/0026-2692(93)90026-B, http://www.sciencedirect.com/science/article/pii/002626929390026B 

  
  

  D. Petković and N. Stojadinović, "Reliability of Polysilicon Thin Film Resistors with Irreversible Resistance Transition", Microelectronics and Reliability, vol. 33, pp. 785-791 (1993) ISSN: 0026-2714,  DOI: 10.1016/0026-2714(93)90250-3,           http://www.sciencedirect.com/science/journal/00262714/33/6

  
  

  N. Stojadinović, "Quarter Century of Field of Microelectronics and ‘Microelectronics Journal’: Joint Crossroads for Further Progress and Development", Microelectronics Journal, vol. 25, no. 1, pp. iii-ix (1994) (review paper) ISSN:0026-2692, DOI:10.1016/0026-2692(94)90148-1 http://www.sciencedirect.com/science/journal/00262692/25/1

  
  

  D. Pantić, S. Mijalković and N. Stojadinović, "An Efficient Multiparticle Diffusion Simulation by an Adaptive Multigrid Method", Microelectronics Journal, vol. 25, no. 2, pp. 79-99 (1994) ISSN: 0026-2692 DOI: 10.1016/0026-2692(94)90106-6, http://www.sciencedirect.com/science/article/pii/0026269294901066 

  
  

  N. Stojadinović , S. Djorić, S. Golubović and V. Davidović, "Separation of Irradiation Induced Gate Oxide Charge and Interface Traps Effects in Power VDMOSFETs", Electronics Letters, vol. 30, no. 23, pp. 1992-1993 (1994) ISSN: 0013-5194,  DOI: 10.1049/el:20020281, http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=30

  
  

  S. Mitrović, S. Mijalković and N. Stojadinović, "Locally one-Dimensional Approach to Diffusion Process Simulation in Nonplanar Domains", Electronics Letters, vol. 31, pp. 1788-1789 (1995) ISSN: 0013-5194,  DOI: 10.1049/el:20020281, http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=31

  
  

  N. Stojadinović, S. Golubović, S. Djorić and S. Dimitrijev, "Analysis of Gamma-Irradiation Induced Degradation Mechanisms in Power VDMOSFETs", Microelectronics and Reliability, vol. 35, no. 3, pp. 587-602 (1995) ISSN: 0026-2714,  DOI:10.1016/0026-2714(95)93077-N,           http://www.sciencedirect.com/science/journal/00262714/35/3

  
  

  N. Stojadinović, M. Pejović, S. Golubović, G. Ristić, V. Davidović and S. Dimitrijev, "Effect of Radiation-Induced Oxide-Trapped Charge on Mobility in p-Channel MOSFETs", Electronics Letters, vol. 31, pp. 497-498 (1995) ISSN: 0013-5194,  DOI: 10.1049/el:20020281, http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=31

  
  

  Z. Savić, B. Radjenović, M. Pejović and N. Stojadinović, "The Contribution of Border Traps to the Threshold Voltage Shift in pMOS Dosimetric Transistors", IEEE Trans. on Nuclear Science, vol. 42, pp. 1445-1454 (1995) ISSN: 0018-9499,  DOI: 10.1109/23.467722,          http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=467722

  
  

  S. Dimitrijev, D. Župac and N. Stojadinović, comments on "Substrate-Bias-Dependent Threshold-Voltage Model of Short-Channel MOSFET", Solid-State Electronics, vol. 38, no. 1, pp. 267 (1995) ISSN: 0038-1101,  DOI: 10.1016/0038-1101(94)00151-5, http://www.sciencedirect.com/science/article/pii/0038110194001515

  
  

  Z. Stamenković, N. Stojadinović and S. Dimitrijev, "Modeling of Integrated Circuit Yield Loss Mechanisms", IEEE Trans. on Semiconductor Manufacturing, vol. 9, no. 22, pp. 270-272 (1996) ISSN: 0894-6507,  DOI: 10.1109/66.492821, SID=T2a7bINIBEd3EhmnBK@&page=7&;doc=65">http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=T2a7bINIBEd3EhmnBK@&page=7&doc=65

  
  

  P. Habaš, Z. Prijić, D. Pantić and N. Stojadinović, "Charge-Pumping Characterization of SiO₂/Si Interface in Virgin and Irradiated Power VDMOSFETs", IEEE Transactions on Electron Devices, vol. 43, no. 12, pp. 2197-2209 (1996) ISSN: 0018-9383, DOI: 10.1109/16.544392, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=544392

  
  

  Z. Prijić, P. Igić, Z. Pavlović and N. Stojadinović, "Simple Method for the Extraction of Power VDMOS Transistor Parameters", Microelectronics Journal, vol. 27, no. 6, pp. 567-570 (1996) ISSN: 0026-2692, DOI: 10.1016/0026-2692(95)00120-4, http://www.sciencedirect.com/science/article/pii/0026269295001204

  
  

  N. Tošić, B. Pešić and N. Stojadinović, "High-Temperature-Reverse-Bias Testing of Power VDMOS Transistors", Microelectronics and Reliability, vol. 37, no. 10-11, pp. 1759-1762 (1997), ISSN: 0026-2714,  DOI: 10.1016/S0026-2714(97)00155-8, http://www.sciencedirect.com/science/journal/00262714/37/10-11 

  
  

  D. Pantić, T. Trajković and N. Stojadinović, "A new Technology Computer Aided Design (TCAD) System Based on Neural Network Models", Microelectronics Journal, vol. 29, no. 1-2, pp. 1-4 (1998) ISSN 0026-2692,  DOI: 10.1016/S0026-2692(97)00016-5, http://www.sciencedirect.com/science/article/pii/S0026269297000165

  
  

  T. Trajković, P. Igić and N. Stojadinović, "A. Novel Method for Extraction of MOS Transistor Model Parameters Using Neural Networks", Microelectronics Reliability, vol. 38, no. 3 pp. 331-335 (1998) ISSN: 0026-2714, DOI: 10.1016/S0026-2714(97)00177-7, http://www.sciencedirect.com/science/journal/00262714/38/3

  
  

  N. Stojadinović, S. Golubović, V. Davidović, S. Djorić-Veljković and S. Dimitrijev, "Modeling Radiation-Induced Mobility Degradation in MOSFETs", Phys. Stat. Sol. (a), vol. 169, no. 1, pp. 63-66 (1998) ISSN: 0031-8965,  DOI: 10.1002/(SICI)1521-396X(199809)169:1<63::AID-PSSA63>3.3.CO;2-W  http://onlinelibrary.wiley.com/doi/10.1002/(SICI)1521-396X(199809)169:1<63::AID-PSSA63>3.0.CO;2-4/abstract

  
  

  Z. Pavlović, I. Manić, Z. Prijić and N. Stojadinović, "Temperature Distribution in the Cells of Low-Voltage Power VDMOS transistor", Microelectronics Journal, vol. 30, no. 2, pp. 109-113 (1999) ISSN 0026-2692, DOI: 10.1016/S0026-2692(98)00096-2, http://www.sciencedirect.com/science/article/pii/S0026269298000962

  
  

  S. Golubović, S. Djorić-Veljković, V. Davidović, and N. Stojadinović,     "Modeling of g-Irradiation and Lowered Temperature Effects in Power VDMOS Transistors", Japanese J. Appl. Phys, vol. 38, no. 8, pp. 4699-4702 (1999)  DOI: 10.1143/JJAP.38.4699

  
  

  N. Stojadinović, S. Golubović, S. Djorić-Veljković, and V. Davidović, "Correction to "Modeling of g-irradiation and lowered temperature effects in power VDMOS transistors"", Japanese J. Appl. Phys, vol. 40 (3A), p. 1530 (2001) ISSN: 0021-4922, DOI: 10.1143/JJAP.38.4699, http://adsabs.harvard.edu/abs/1999JaJAP..38.4699G, http://jjap.jsap.jp/link?JJAP/38/4699/

  
  

  I. Manić, Z. Pavlović, Z. Prijić, V. Davidović and N. Stojadinović, "Analytical Modeling of Electrical Characteristics in g-Irradiated Power VDMOS Transistor", Microelectronics Journal, vol. 32, no. 5-6, pp. 485-490 (2001) ISSN: 0026-2692, DOI: 10.1016/S0026-2692(01)00019-2, http://www.sciencedirect.com/science/article/pii/S0026269201000192

  
  

  N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, and S. Dimitrijev, "Mechanisms of Positive Gate Bias Stress Induced Instabilities in Power VDMOSFETs", Microelectronics Reliability, vol. 41, no. 9-10, pp. 1373-1378 (2001) ISSN: 0026-2714,  DOI: 10.1016/S0026-2714(01)00143-3, http://www.sciencedirect.com/science/journal/00262714/41/9-10

  
  

  Z. Stamenković and N. Stojadinović, "Computer-Aided Analysis and Forecast of Integrated Circuit Yield", in "The Computer Engineering Handbook", edited by V. Oklobžija, CRC Press, Boca Raton, pp. 47.1-47.24 (2001) ISBN-10: 0849308852 ISBN-13: 978-0849308857, http://www.amazon.com/Computer-Engineering-Handbook-2e/dp/0849308852

  
  

  N. Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidovic and S. Golubović, "Radiation Hardening of Power VDMOSFETs Using Electrical Stress", Electronics Letters, vol. 38, no. 9, pp. 431-432 (2002)  ISSN: 0013-5194,  DOI: 10.1049/el:20020281, http://digital-library.theiet.org/dbt/dbt.jsp?KEY=ELLEAK&Volume=38

  
  

  N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović and S. Dimitrijev, "Effects of High Electric Field and Elevated-Temperature Bias Stressing on Radiation Response in Power VDMOSFETs", Microelectronics Reliability, vol. 42, no. 4-5, pp. 669-677 (2002) ISSN: 0026-2714,  DOI: 10.1016/S0026-2714(02)00039-2, http://www.sciencedirect.com/science/journal/00262714/42/4-5

  
  

  N. Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović, and S. Golubović, "Effects of Burn-in Stressing on Radiation Response of Power VDMOSFETs", Microelectronics Journal, vol. 33, no. 11, pp. 899-905 (2002) ISSN: 0026-2692,  DOI: 10.1016/S0026-2692(02)00121-0, http://www.sciencedirect.com/science/article/pii/S0026269202001210

  
  

  N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, D. Danković, S. Golubović and S. Dimitrijev, "Mechanisms of Spontaneous Recovery in Positive Gate Bias Stressed Power VDMOSFETs", Microelectronics Reliability, vol. 42, no. 9-11, pp. 1465-1468 (2002) ISSN: 0026-2714,  DOI: 10.1016/S0026-2714(02)00171-3, http://www.sciencedirect.com/science/journal/00262714/42/9-11

  
  

  S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, and N. Stojadinović, "Effects of Burn-in Stressing on Post-Irradiation Annealing Rresponse of Power VDMOSFETs", Microelectronics Reliability, vol. 43, no. 9-11, pp. 1455-1460 (2003) ISSN: 0026-2714,  DOI: 10.1016/S0026-2714(03)00258-0, http://www.sciencedirect.com/science/journal/00262714/43/9-11

  
  

  B. Pešić, Lj. Vračar, N. Stojadinović, M. Pecovska-Djordjević, and N. Novkovski, "Stress-Induced Leakage Currents in Thin Silicon Dioxide Films", Journal of Materials Science, Materials in Electronics, vol. 14, no. 10-12, pp. 805-807 (2003)  ISSN: 0957-4522,  DOI: 10.1023/ A:1026169624327, http://www.springerlink.com/content/w04l386g11537150/

  
  

  D.N. Kouvatsos, V. Davidović, G.J. Papaioannou, N. Stojadinović, L. Michalas, M. Exarchos, A.T. Voutsas, and D. Goustouridis, "Effects of Hhot Carrier and Irradiation Stresses on Advanced Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistors", Microelectronics Reliability, vol. 44, no. 9-11, pp. 1631-1636 (2004)  ISSN: 0026-2714,  DOI: 10.1016/ j.microrel.2004.07.082, http://www.sciencedirect.com/science/journal/00262714/44/9-11

  
  

  N. Stojadinović, I. Manić, V. Davidović, D. Dankovic, S. Djorić-Veljković, S. Golubović, and S. Dimitrijev, "Effects of Electrical Stressing in Power VDMOSFETs", Microelectronics Reliability, vol. 45, no. 1, pp. 115-122 (2005) (invited paper)  ISSN: 0026-2714,  DOI: 10.1016/j.microrel.2004.09.002, http://www.sciencedirect.com/science/journal/00262714/45/1

  
  

  N. Stojadinović, D. Danković, S. Djorić-Veljković, V. Davidović, I. Manić, and  S. Golubović, "Negative Bias Temperature Instability Mechanisms in p-Channel Power VDMOSFETs", Microelectronics Reliability, vol. 45, no. 9-11, pp. 1343-1348 (2005)  ISSN: 0026-2714,  DOI: 10.1016/j.microrel.2005.07.018, http://www.sciencedirect.com/science/journal/00262714/45/9-11

  
  

  N. Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, and S. Dimitrijev, "Electrical Stressing Effects in Commercial Power VDMOSFETs", IEE Proc. - Circuits, Devices and Systems, vol. 153, no. 3, pp. 281-288 (2006) ISSN: 1350-2409,  DOI: 10.1049/ip-eds:20050050, http://digital-library.theiet.org/IET-CDS

  
  

  D. Danković, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, and  N. Stojadinović"NBT Stress-Induced Degradation and Lifetime Estimation in p-channel Power VDMOSFETs", Microelectronics Reliability, vol. 46, no. 9-11, pp. 1828-1833 (2006) ISSN: 0026-2714,  DOI: 10.1016/j.microrel.2006.07.077, http://www.sciencedirect.com/science/journal/00262714/46/9-11

  
  

  D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, N. Stojadinović, "Negative Bias Temperature Instabilities in Sequentialy Stressed and Annealed in p-Channel Power VDMOSFETs", Microelectronics Reliability, vol. 47, no. 9-11, pp. 1400 - 1405 (2007) ISSN: 0026-2714,  DOI: 10.1016/j.microre1.2007.07.022, http://linkinghub.elsevier.com/retrieve/pii/S0026271407002910

  
  

  V. Davidović, DN. Kouvatsos, N. Stojadinović and A.T. Voutsas, "Influence of Polysilicon Film Thickness on Radiation Response of Advanced Excimer Laser Annealed Polycrystalline Thin Film Transistors", Microelectronics Reliability, vol. 47, no. 9-11, pp. 1841 - 1845 (2007)  ISSN 0026-2714,  DOI: 10.1016/j.microrel.2007.07.025, http://www.sciencedirect.com/science/journal/00262714/47/9-11

  
  

  Z. Stamenković and N. Stojadinović, "Computer-Aided Analysis and Forecast of Integrated Circuit Yield", in "Digital Design and Fabrication", edited by V. Oklobžija, CRC Press, Boca Raton, pp. 24.1-24.24  (2007)  Print ISBN: 978-0-8493-8602-2,  eBook ISBN: 978-0-8493-8604-6, http://www.crcnetbase.com/doi/abs/10.1201/9780849386046.ch24

  
  

  I. Manić, S. Djorić-Veljković, V. Davidović, D. Danković, S. Golubović, N. Stojadinović, "Mechanisms of Spontaneous Recovery in DC Gate Bias Stressed Power VDMOSFETs", IET Circuits, Devices and Systems, vol. 2, no. 2, pp. 213-221 (2008) ISSN: 1751-858X,  DOI: 10.1049/iet-cds:20070173, http://digital-library.theiet.org/IET-CDS

  
  

  E. Atanassova, N. Stojadinović, A. Paskaleva, D. Spssov, Lj. Vračar, M. Georgieva, "Constant Voltage Stress Induced Current in Ta₂O₅ Stacks and Dependence on a Gate Electrode", Semiconductor Science and Technology, vol. 23, Art. no. 075017 p. 9 (2008) ISSN: 0268-1242 (Print) 1361-6641  DOI: 10.1088/0268-1242/23/7/075017, http://iopscience.iop.org/0268-1242/23/7/075017/pdf/0268-1242_23_7_075017.pdf

  
  

   

  
  

  V. Davidović, N. Stojadinović, D. Dankovi ć, S. Golubović, I. Manić, S. Djorić-Veljković, and S. Dimitrijev, "Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double–Diffused Metal-Oxide-Semiconductor Transistors", Japanese J. Appl. Phys, vol. 47, pp. 6272-6276 (2008)  ISSN: 1347-4065 (online) 0021-4922 (print) DOI: 10.1143/JJAP.47.6272, http://jjap.jsap.jp/link?JJAP/47/6272/

  
  

  E. Atanassova, N. Stojadinović, and A. Paskaleva, "Degradation Behaviour of T₂O₅ Stacks and its Dependence on the Gate Electrode", Microelectronics Reliability, vol. 48, no. 8-9, pp. 1193 - 1197 (2008)  ISSN: 0026-2714,  DOI: 10.1016/j.microrel.2008.07.006, http://www.sciencedirect.com/science/journal/00262714/48/8-9

  
  

  D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, and N. Stojadinović, "Negative Bias Temperature Instability in n-Channel Power VDMOSFETs", Microelectronics  Reliability, vol. 48, no. 8-9, pp. 1313 - 1317 (2008)  ISSN: 0026-2714,  DOI: 10.1016/j.microrel.2008.06.015, http://linkinghub.elsevier.com/retrieve/pii/S0026271408002023

  
  

  I. Manić, D. Danković, S. Djorić-Veljković, V. Davidović, S. Golubović, and N. Stojadinović, "Effects of Low Gate Bias Annealing in NBT Stressed p-Channel Power VDMOSFETs", Microelectronics Reliability, vol. 49, no. 9-11, pp. 1003 - 1007 (2009)  ISSN: 0026-2714,  DOI: 10.1016/j.microrel.2009.07.010, http://linkinghub.elsevier.com/retrieve/pii/S0026271409002418

  
  

  N. Stojadinović, D. Danković, I. Manić, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, and Z. Prijić, "Threshold Voltage Instabilities in p-Channel Power VDMOSFETs Under Pulsed NBT Stress", Microelectronics Reliability, vol. 50, no. 9-11, pp. 1278 - 1282 (2010) ISSN: 0026-2714,  DOI: 10.1016/j.microrel.2010.07.122, http://linkinghub.elsevier.com/retrieve/pii/S0026271410003951

  
  

  I. Manić, E. Atanassova, N. Stojadinović, D. Spasov, A. Paskaleva, "Hf-doped Ta₂O₅ Stacks Under Constant Voltage Stress", Microelectronic Engineering, vol. 88, no. 3, pp. 305 - 313 (2011)  ISSN: 0167-9317,  DOI: 10.1016/j.mee.2010.11.033, http://linkinghub.elsevier.com/retrieve/pii/S0167931710004545

  
  

  S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, and N. Stojadinović, "Annealing of Radiation-Induced Defects in Burn-In Stressed Power VDMOSFETs", Nuclear Technology & Radiation Protection, vol. 26, no. 1, pp. 18 - 24 (2011)  ISSN: 1451-3994,  DOI: 10.2298/NTRP1101018D, http://www.doiserbia.nb.rs/issue.aspx?issueid=1435

  
  

  I. Manić, D. Danković, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, Z. Prijić, and N. Stojadinović, "NBTI Related Degradation and Lifetime Estimation in p-Channel Power VDMOSFETs Under the Static and Pulsed NBT Stress Conditions", Microelectronics Reliability, vol. 51, no. 9-11, pp. 1540 - 1543 (2011)  ISSN: 0026-2714,  DOI: 10.1016/j.microrel.2011.06.004,  http://www.sciencedirect.com/science/journal/00262714/51/9-11

  
  

  A. Prijić, D. Danković, Lj. Vračar, I. Manić, Z. Prijić, and N. Stojadinović, "A Method for Negative Bias Temperature Instability (NBTI) Measurements on Power VDMOS Transistors ", Measurement Science & Technology, vol. 23, no. 8, Art. No. 085003 (2012) ISSN: 0957-0233, DOI: 10.1088/0957-0233/23/8/085003, http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=S1G11h832nKh37pLc4O&page=1&doc=1

  
  

  D. Danković, I. Manić, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, Z. Prijić, and N. Stojadinović, "Effects of Static And Pulsed Negative Bias Temperature Stressing on Lifetime in p-Channel Power VDMOSFETs", Informacije MIDEM-Journal of Microelectronics Electronic Components and Materials, vol. 43, iss. 1, pp. 58-66 (2013), http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=Z22j57CeMP5MaBOhIgI&page=1&doc=2

  
  

  E. Atanassova, N. Stojadinović, D. Spasov, I. Manić,A. Paskaleva, "Time-Dependent Dielectric Breakdown in Pure and Lightly Al-Doped Ta 2O5 Stacks", Semiconductor Science and Technology, vol. 28, no. 5, art. no. 055006, (2013)  ISSN: 0268-1242,  DOI: 10.1088/0268-1242/28/5/055006, http://iopscience.iop.org/0268-1242/28/5/055006/pdf/0268-1242_28_5_055006.pdf, http://link.springer.com/book/10.1007/978-1-4614-7909-3

  
  

  S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, and N. Stojadinović, "Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power VDMOSFETs", Nuclear Technology & Radiation Protection, vol. 28, no. 4, pp. 18-24 (2013)  

• Radovi u ostalim časopisima:

  N. Stojadinović, S. Mijalković i D. Pantić, "Modeliranje procesa i komponenata integrisanih kola na Elektronskom fakultetu u Nišu", Informacije MIDEM, vol. 17, pp. 142-150 (1987)

  
  

  N. Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, S. Dimitrijev, "Effects of Gate Bias Stressing in Power VDMOSFETs", Serbian Journal of Electrical Engineering, vol. 1, pp. 89-101 (2003)

  
  

  Danijel. Danković, I. Manić, V. Davidović, Aneta Prijić, S. Djorić-Veljković, S. Golubović, Zoran Prijić, N. Stojadinović, "Lifetime Estimation in NBT-Stressed P-Channel Power VDMOSFETs", Facta Universitatis: Series Automatic Control and Robotics, vol. 11, no. 1, pp. 15-23 (2012)  ISSN 1820-6417         http://facta.junis.ni.ac.rs/acar/acar201201/acar20120102.html              

• Radovi na naučnim skupovima međunarodnog značaja:

  N.D. Stojadinović and R.S. Popović, "A Study of Dislocations Induced in Emitter Phosphorus Diffusion during Silicon Planar Transistor Production: Generation, Elimination and Effects on Characteristics", "Semiconductor Silicon 1981", edited by H.R. Huff, R.J. Kriegler and Y. Takeishi, Electrochem. Soc., Pennington, 1981 (pp. 844-855)

  
  

  N. Stojadinović, E. Jelenković and S. Zdravković, "Influence of Emitter Diffusion Induced Dislocations on Reliability of Planar NPN Transistors", Proc. 5^th European Conference on Electrotechnics: Reliability in Electrical and Electronic Components and Systems (EUROCON‘82), edited by E. Laguer and J. Moltoft, Nort-Holland Publishing Co., Amsterdam 1982 (pp. 270-273), http://www.sciencedirect.com/science/article/pii/S0026271482805647

  
  

  N. Stojadinović, "Failure Mechanisms of Integrated Circuits", Proc. 6^th International Conference on Reliability in Electronics (RELECTRONIC‘85), Budapest 1985 (pp. 422-445) (invited paper)

  
  

   

  
  

  Z. Živić, A. Živić and N. Stojadinović, "The Effects of Avalanche Hot-Carrier Injection in a New NMOST Structure", Proc. 6^th International Conference on Reliability in Electronics (RELECTRONIC’85), Budapest 1985 (pp. 458-465)

  
  

  N. Stojadinović, "Failure Mechanisms of VLSI Integrated Circuits", Proc. 1^st Symposium on Diagnostics and Yield, edited by A.Jakubowski, Warsaw 1986 (invited paper)

  
  

  S. Golubović, S. Dimitrijev, D. Župac, M. Pejović and N. Stojadinović, "Gamma-Radiation Effects in CMOS Transistors", Proc. 17^th European Solid State Device Research Conference (ESSDERC’87), edited by G. Soncini, Bologna 1987 (pp. 725-728) Print ISBN: 0444704779, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5436749

  
  

  S. Mijalković and N. Stojadinović, "Multigrid Method: An Efficient Numerical Tool in VLSI Process Modeling", Proc. 1^st International Conference on Computer Technology, Systems and Applications (COMPEURO‘87), edited by W.E. Proebster and H. Reiner, Hamburg 1987 (pp. 508-509), http://scholar.google.com/scholar?q=related:osrAIcE6mXkJ:scholar.google.com/&hl=en&as_sdt=0,5

  
  

  S. Mijalković and N. Stojadinović, "Solution of the Diffusion Equation in VLSI Process Modeling by a Nonlinear Multigrid Algorithm", Proc. 3^rd International Conference on Numerical Methods and Approximation Theory (NMAT‘87), edited by G.V. Milovanović, Niš, August 1987 (pp. 301-310), http://scholar.google.com/scholar?q=Solution+of+the+Diffusion+Equation+in+VLSI+Process+Modeling+by+a+Nonlinear+Multigrid+Algorithm&hl=en&as_sdt=1%2C5&as_sdtp=on

  
  

  D. Pantić, S. Mijalković, Z. Prijić and N. Stojadinović, "Optimization of CMOS Technology", Proc. 6^th Scientific-Technical Conference with International Participation (MICROELECTRONICS‘88), Botevgrad 1988 (pp. 7-12) (invited paper)

  
  

  S. Mijalković, D. Pantić and N. Stojadinović, "On Efficiency of Multigrid Methods in Two-Dimensional Impurity Redistribution Simulation", Proc. 3^rd International Conference on Simulation of Semiconductor Devices and Processes (SISDEP‘88), edited by G. Baccarani and M. Rudan, Bologna September 26-28 1988 (pp. 463-474), http://openlibrary.org/books/OL14353007M/SISDEP-88

  
  

  N. Stojadinović and S. Dimitrijev, "Instabilities in MOS Transistors", Proc. 7^th International Symposium on Reliability in Electronics (RELECTRONIC‘88), Budapest 1988 (pp. 525-542) (invited paper)  also Microelectronics and Reliability, vol. 29, no. 3, pp. 371-380 (1989) DOI: 10.1016/0026-2714(89)90623-9, http://www.sciencedirect.com/science/article/pii/0026271489906239

  
  

  Z. Prijić, S. Dimitrijev and N. Stojadinović, "Modeling of the Electrical Characteristics of CMOS Transistors at High Temperatures", Proc. 17^th Yugoslav Conference on Microelectronics (MIEL‘89), edited by N. Stojadinović, Elsevier Advanced Technology, Oxford 1989 (pp. 325-330) ISBN-10: 0948577339; ISBN-13: 978-0948577338  http://www.amazon.com/Microelectronics-Conference-Proceedings-N-Stojadinovibc/dp/0948577339

  
  

  S. Golubović, M. Pejović, S. Dimitrijev and N. Stojadinović, "Effects of UV-Radiation Annealing on X-Ray Induced Damage in CMOS Transistors", Proc. 17^th Yugoslav Conference on Microelectronics (MIEL‘89), edited by N. Stojadinović, Elsevier Advanced Technology, Oxford 1989 (pp. 833-838) ISBN-10: 0948577339; ISBN-13: 978-0948577338 http://www.amazon.com/Microelectronics-Conference-Proceedings-N-Stojadinovibc/dp/0948577339

  
  

  S. Dimitrijev and N. Stojadinović, "Yield Modeling in Integrated Circuit Production Control: A Critical Review", Proc. 2^nd Symposium on Diagnostics and Yield in Integrated Circuit Production, edited by A. Jakubowski, Warsaw 1989 (pp. 16-23) (invited paper)

  
  

  Z. Stamenković, S. Dimitrijev and N. Stojadinović, "Defect Size Distribution for Yield Modeling", Proc. 2^nd Symposium on Diagnostics and Yield in Integrated Circuit Production, edited by A. Jakubowski, Warsaw 1989 (pp. 164-171)

  
  

  N. Stojadinović, B. Pešić and D. Župac, "Failure Analysis of Integrated Circuits", 13^th ISHM Conference, Wroclaw 1989, (invited paper)

  
  

  Z. Stamenković and N. Stojadinović, "Test Structures for Integrated Circuit Yield Control", Technical Proc. of SEMICON/Europa’91 - Defect Control and Related Yield Management, Zurich 1991 (pp. 169-176)

  
  

  S. Mijalković, D. Pantić, Z. Prijić, S. Mitrović and N. Stojadinović, "MUSIC - A Multigrid Simulator for IC Fabrication Processes", Proc. of the 7^th International Conference on the Numerical Aanalysis of Semiconductor Devices and Integrated Circuits (NASECODE VII), edited by J.J.H. Miller, Copper Mountain 1991 (pp. 111-113), http://www.emeraldinsight.com/journals.htm?articleid=1672850&show=abstract

  
  

  Z. Stamenković, S. Dimitrijev, N. Stojadinović, "Integrated Circuit Production Yield Assurance Based on Yield Analysis", Proc. of the 8^th International Symposium on Reliability in Electronics (RELECTRONIC’91), Budapest 1991

  
  

  T. Brožek, B. Pešić, A. Jakubowski, N. Stojadinović, "The Influence of Ionizing Radiation on Dielectric Strength of the Gate Oxide", 8^th International Symposium on Reliability in Electronics (RELECTRONIC’91), Budapest 1991

  
  

  S. Mijalković, D. Pantić, Z. Prijić and N. Stojadinović, "Adaptive Multigrid Strategies for Simulation of Diffusion Processes", Proc. 4^th International Conference on Simulation of Semiconductor Devices and Processes (SISDEP’91), edited by W. Fichtner and D. Aemmer, Zürich.Switzerland 1991 (pp. 505-511), http://in4.iue.tuwien.ac.at/pdfs/sisdep1991/pdfs/Mijalkovic_55.pdf

  
  

  Z. Pavlović, T. Jovanović, Z. Prijić, S.Ristić and N. Stojadinović, "An Improved Model for the Current-Voltage Characteristics of VDMOS Transistor in Strong Inversion", Proc. of 1^st International Seminar on Power Semiconductors (ISPS’92), Prague 1992 (pp. 94-101)

  
  

  Z. Pavlović, Z. Prijić, S. Ristić and N. Stojadinović, "High Temperature Behavior of Power VDMOS Transistors", Proc. of 3^rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF’92), October 1992, Schwäbisch Gmünd (pp. 47-50)

  
  

  T. Brozek, B. Pešić, A. Jakubowski and N. Stojadinović, "Breakdown Characteristics of Gamma-Irradiated and Annealed Oxides", Proc. of 3^rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF’92), October 1992, Schwäbisch Gmünd (pp. 391-394)

  
  

  S. Mijalković, D. Pantić, Z. Prijić and N. Stojadinović, "Multigrid Approach for an Efficient Diffusion Simulation in VLSI Technology", Proc. of the 15^th Annual Semiconductor Conference (CAS’92), October 1992, Sinaia, (pp. 29-38) (invited paper)

  
  

  D. Pantić, S. Mijalković and N. Stojadinović, "The Efficient Simulation of Point Defects Diffusion by an Adaptive Multigrid Method", 22^nd European Solid State Devices Research Conference (ESSDERC’92), Leuven 1992 (pp. 789-792), also Microelectronic Engineering 1992, ISSN: 0167-9317, DOI: 10.1016/0167-9317(92)90546-4, http://www.sciencedirect.com/science/article/pii/0167931792905464

  
  

  B. Pešić, T. Brozek, N. Stojadinović and A. Jakubowski, "Statistical Modeling of Multimodal Gate Oxide Breakdown Data Based on Mixed Weibull Distributions Concept", Proc. 4^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF’93), Bordeaux 1993 (pp. 171-176)

  
  

  Z. Prijić, Z. Pavlović, S. Ristić, T. Jovanović and N. Stojadinović, "High Temperature Behaviour of MOS Devices - A Review", Proc. of the 16 ^th Annual Semiconductor Conference (CAS’93), Sinaia 1993 (pp. 425-434) (invited paper)

  
  

  P. Habaš, D. Pantić, Z. Prijić and N. Stojadinović, "Technology CAD of Low-Voltage Power VDMOSFET", Proc. 17 ^th Annual Semiconductor Conference (CAS’94), Sinaia, October 1994 (pp. 501-510) (invited paper), http://scholar.google.com/scholar?q=Technology+CAD+of+Low-Voltage+Power+VDMOSFET&hl=en&as_sdt=1%2C5&as_sdtp=on

  
  

  B. Pešić, D. Manić, Lj. Živković and N. Stojadinović, "Pre-Breakdown Electron Trapping in Irradiated and Annealed Oxides", Proc. 20^th International Conference on Microelectronics (MIEL’95), Niš, September 1995 (pp. 273-276) ISBN 0-7803-2786-1, DOI: 10.1109/ICMEL.1995.500879, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=500879

  
  

  N. Tošić, B. Pešić, and N. Stojadinović, "High Temperature Storage Life (HTSL) and High Temperature Reverse Bias (HTRB) Reliability Testing of Power VDMOSFETs", Proc. 20 ^th International Conference on Microelectronics (MIEL’95), Niš, September 1995 (pp. 285-288) ISBN 0-7803-2786-1, DOI: 10.1109/ICMEL.1995.500882, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=500882

  
  

  D. Pantić, S. Milenković, T. Trajković, V. Litovski and N. Stojadinović, "Inverse Modeling of Semiconductor Manufacturing Processes by Neural Networks", Proc. 20^th International Conference on Microelectronics (MIEL’95), Niš, September 1995 (pp. 321-326) Print ISBN 0-7803-2786-1, DOI: 10.1109/ICMEL.1995.500888, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=500888

  
  

  D. Pantić, T. Trajković, S. Milenković and N. Stojadinović, "Optimization of Power VDMOSFET’s Process Parameters by Neural Networks", Proc. 25^th European Solid State Device Research Conference (ESSDERC’95), The Hague, September 1995 (pp. 793-796) Print ISBN: 286332182X, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5436134

  
  

  B. Pešić, N. Tošić, Z. Prijić, Z. Pavlović and N. Stojadinović, "Reliability of Power VDMOS Transistors", Proc. 6^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF’95), Bordeaux, October 1995 (pp. 111-116)

  
  

  B. Pešić and N. Stojadinović, "Electron Trapping and Oxide Breakdown in Irradiated MOS Structures", Proc. 14^th International Conference on Reliability in Electronics (RELECTRONIC’95), Budapest, October 1995 (pp. 335-340)

  
  

  B. Pešić and N. Stojadinović, "Breakdown Characteristics of Irradiated and Post-Irradiation Annealed Gate Oxides", Proc. 9^th International School on Condensed Matter Physics "Future Directions in Thin Film Science and Technology" (ISCMP’96 ), Varna, September 1996 (pp. 297-304) (invited paper)

  
  

  Z. Prijić, D. Pantić and N. Stojadinović, "Educative Aspects of Power VDMOS Transistor Simulation", Proc. of 3^rd International Seminar on Power Semiconductors (ISPS’96), Prague, September 1996 (pp. 187-193)

  
  

  N. Tošić, B. Pešić and N. Stojadinović, "Investigation of Failure Mechanisms in Power VDMOSFETs", Proc. 6^th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA’97), Singapore, July 1997 (pp. 191-195) Print ISBN: 0-7803-3985-1, DOI: 10.1109/IPFA.1997.638198, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=638198

  
  

  N. Stojadinović, S. Golubović, V. Davidović, S. Djorić-Veljković and S. Dimitrijev, "Modeling of Radiation-Induced Mobility Degradation in MOSFETs", Proc. 21^st International Conference on Microelectronics (MIEL’97), Niš, September 1997 (pp. 355-356) ISBN 0-7803-3664-X, DOI: 10.1109/ICMEL.1997.625271, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=625271

  
  

  N. Tošić, B. Pešić and N. Stojadinović, "Reliability Testing of Power VDMOS Transistors", Proc. 21^st International Conference on Microelectronics (MIEL’97), Niš, September 1997 (pp. 667-670) ISBN: 0-7803-3664-X, DOI: 10.1109/ICMEL.1997.632933, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=632933

  
  

  T. Trajković, P. Igić and N. Stojadinović, "Extraction of Power VDMOS Transistor Model Parameters Using Neuralnetworks", Proc. 21^st International Conference on Microelectronics (MIEL’97), Niš, September 1997 (pp. 463-466) ISBN: 0-7803-3664-X, DOI: 10.1109/ICMEL.1997.632869, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=632869

  
  

  N. Tošić, B. Pešić and N. Stojadinović, "High Temperature Reverse Bias Testing of Power VDMOS Transistors", Proc. 8^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF’97), Arcachon, October 1997 (pp. 1759-1762), also Microelectronics Reliability1997, ISSN: 0026-2714, DOI: 10.1016/S0026-2714(97)00155-8, http://www.sciencedirect.com/science/article/pii/S0026271497001558

  
  

  Z. Pavlović, I. Manić, Z. Prijić and N. Stojadinović, "Temperature Dependence of ON‑Resistance in High-Voltage Power VDMOS Transistors", Proc. of 4^th International Seminar on Power Semiconductors (ISPS’98), Prague, September 1998 (pp. 227-232)

  
  

  Z. Pavlović, I. Manić, Z. Prijić and N. Stojadinović, "Influence of Channel Dopant Concentration and Temperature on Low-Voltage VDMOS Transistor ON-Resistance", Proc. 21^st International Semiconductor Conference (CAS’98), Sinaia, October 1998 (pp. 153-156) Print ISBN: 0-7803-4432-4, DOI: 10.1109/SMICND.1998.732323, 

  
  

  P. Habaš and N. Stojadinović, "Mechanisms of Radiation-Induced Failures in Power Mosfets", Proc. 6^th International Conference on Mixed Design of Integrated Circuits And Systems (MIXDES’99), Krakow, June 1999 (pp. 43-54) (invited paper)

  
  

  V. Davidović, S. Djorić-Veljković, S. Golubović and N. Stojadinović, "Room Temperature Relaxation of Irradiated and Cooled Power VDMOS Transistors", Proc. 6 ^th International Conference on Mixed Design of Integrated Circuits And Systems (MIXDES‘99), Krakow, June 1999 (pp. 291-294)

  
  

  S. Djorić-Veljković, S. Golubović, V. Davidović, and N. Stojadinović, "Power VDMOS Transistors Response to Lowered Temperature Conditions", Proc. 22^nd International Conference on Microelectronics (MIEL‘00), Niš, May 2000 (pp. 383-386) ISBN 0-7803-5235-1, DOI: 10.1109/ICMEL.2000.840595, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=840595

  
  

  Z. Pavlović, I. Manić, Z. Prijić, V. Davidović, and N. Stojadinović, "Influence of Gate Oxide Charge Density on VDMOS Transistor ON-Resistance", Proc. 22^nd International Conference on Microelectronics (MIEL‘00), Niš, May 2000 (pp. 663-666) ISBN 0-7803-5235-1, DOI: 10.1109/ICMEL.2000.838777, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=838777

  
  

  I. Manić, Z. Pavlović, Z. Prijić, V. Davidović, and N. Stojadinović, "Influence of g-Irradiation on Electrical Characteristics of Power VDMOS Transistors", Proc. 5^th International Seminar on Power Semiconductors (ISPS‘00), Prague, August 2000 (pp. 203-208), http://apps.webofknowledge.com/summary.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=Z1KIccpEb4bOPiJcAhl&&page=4

  
  

  S. Djorić-Veljković, V. Davidović, S. Golubović and N. Stojadinović, "Radiation Effects in Low-Temperature Stressed Power VDMOS Transistors", Proc. 23^rd International Semiconductor Conference (CAS‘00), Sinaia, Romania, October 2000 (pp. 337-340)  Print ISBN: 0-7803-5885-6, DOI: 10.1109/SMICND.2000.890249, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=890249

  
  

  I. Manić, Z. Pavlović, S. Golubović, S. Djorić-Veljković, V. Davidović, and N. Stojadinović, "Effects of g-Irradiation on Drain Current and Transconductance in Power VDMOS Transistors", Proc. 8^th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES‘01), Zakopane (Poland), June 2001 (pp. 333-338)

  
  

  N. Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović, and S. Golubović, "Effects of Elevated-Temperature Bias Stressing on Radiation Response in Power VDMOS Transistors", Proc. 8^th  International Symposium on the Physical&Failure Analysis of Integrated Circuits (IPFA‘01), Singapore, July 2001 (pp. 243-248)  DOI: 10.1109/IPFA.2001.941495, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=941495

  
  

  N. Stojadinović, S. Djorić-Veljković, V. Davidović, I. Manić, and S. Golubović, "Gamma-Irradiation Effcets in Power MOSFETs for Applications in Communications Satellites", Proc. 5^th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS‘01), Niš (Yugoslavia), September 2001 (pp. 395-400), SID=R27am73nK8a75mNhn7@&page=3&;doc=22">http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=CitingArticles&qid=9&SID=R27am73nK8a75mNhn7@&page=3&doc=22

  
  

  N. Stojadinović , I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, and S. Dimitrijev, "Mechanisms of Positive Gate Bias Stress Induced Instabilities in Power VDMOSFETs", Proc. 12^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘01), Bordeaux (France), October 2001 (pp. 1373-1378), also Microelectronics Reliability 2001, ISSN: 0026-2714, DOI: 10.1016/S0026-2714(01)00143-3, http://elibrary.ru/item.asp?id=12178888

  
  

  N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, and S. Dimitrijev, "Effects of Positive Gate Bias Stressing and Subsequent Recovery Treatment in Power VDMOSFETs", Proc. 4^th IEEE International Caracas Conference on Devices, Circuits, and Systems (ICCDCS‘02), Aruba (Dutch Caribbean), 15-17 April 2002, (pp. DO50-1 ‑ DO50-8) (invited paper) Print ISBN: 0-7803-7380-4, DOI: 10.1109/ICCDCS.2002.1004073, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1004073

  
  

  N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, D. Danković, S. Golubovic and S. Dimitrijev, "Spontaneous Recovery of Positive Gate Bias Stressed Power VDMOSFETs", Proc. 23^rd International Conference on Microelectronics (MIEL‘02), Niš, May 2002 (pp. 717-722) ISBN 0-7803-7235-2, DOI: 10.1109/MIEL.2002.1003358, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1003358

  
  

  N. Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović and S. Golubović, "Effects of Positive Gate Bias Stress on Radiation Response in Power VDMOSFETs", Proc. 23^rd International Conference on Microelectronics (MIEL‘02), Niš, May 2002 (pp. 723-726) ISBN 0-7803-7235-2, DOI: 10.1109/MIEL.2002.1003359, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1003359

  
  

  N. Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović and S. Golubović, "Radiation Response of Elevated-Temperature Bias Stressed Power VDMOSFETs" Proc. 6^th International Seminar on Power Semiconductors (ISPS‘02), Prague, September 2002 (69-74)

  
  

  N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, D. Danković, S. Golubovic, and S. Dimitrijev, "Mechanisms of  Spontaneous Recovery in Positive Gate Bias Stressed Power VDMOSFETs", Proc. 13^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘02), Rimini (Italy), October 2002 (pp.1465-1468), also Microelectronics Reliability 2002), ISSN: 0026-2714, DOI: 10.1016/S0026-2714(02)00171-3, http://www.sciencedirect.com/science/article/pii/S0026271402001713

  
  

  N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović and S. Golubović, "Electrical Stress Effects in Thick Gate Oxides for Power MOS Devices", 12^th International School on Condensed Matter Physics (ISCMP‘02), Varna, September 2002

  
  

  I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, S. Dimitrijev and N. Stojadinović, "Effects of Negative Gate Bias Stressing in Thick Gate Oxides for Power VDMOSFETs", Proc. 12^th Workshop on Dielectrics in Microelectronics (WODIM‘02), Grenoble, November 2002 (pp. 41-44) ISBN 2-9514840-0-3, http://cat.inist.fr/?aModele=afficheN&cpsidt=14832065

  
  

  S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović and N. Stojadinović, "Effects of Burn-in Stressing on Post-Irradiation Annealing Response of Power VDMOSFETs", Proc. 14^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘03), Bordeaux (France), October 2003 pp.(1455-1460), also Microelectronics Reliability 2003, ISSN: 0026-2714, DOI: 10.1016/S0026-2714(03)00258-0, http://www.sciencedirect.com/science/article/pii/S0026271403002580

  
  

  V. Davidović, I. Manić, S. Djorić-Veljković, D. Danković, S. Golubović, S. Dimitrijev, and N. Stojadinović, "Effects of Negative Gate Bias Stressing in Power VDMOSFETs", Proc. 7^th International Symposium on Microelectronics Technologies and Microsystems (MTM‘03), Sozopol (Bulgaria), September 2003 (pp. 150-155)

  
  

  Lj. Vračar, N. Stojadinović, B. Acković, et al., "Computer Controlled Equipment for Laboratory Exercises in Physics and Electronics", Proc. International Conference on Conputer as a Tool (IEE REGION 8 EUROCON‘03), Ljubljana (Slovenija), September 2003 (pp.134-137) ISBN: 0-7803-7763-X, DOI: 10.1109/EURCON.2003.1247995, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1247995

  
  

  N. Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, and S. Dimitrijev, "Effects of Electrical Stressing in Power VDMOSFETs", Proc. IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC‘03), Hong Kong, December 2003 (pp. 291-296) DOI: 10.1109/EDSSC.2003.1283534, http://www.vrg.utoronto.ca/~ngwt/Publications/EDSSC/2003/

  
  

  Z. Pavlović, I. Manić, and N. Stojadinović, "An Improved Analytical Model of IGBT in Forward Conduction Mode", Proc. 24^th International Conference on Microelectronics (MIEL‘04), Niš, May 2004 (pp. 163-166) ISBN 0-7803-8116-1, ISSN: 2159-1660, DOI: 10.1109/ICMEL.2004.1314581, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1314581

  
  

  M. Exarchos, D.N. Kouvatsos, G.J. Papaioannou, V. Davidović, N. Stojadinović, L.Michalas, and A.T. Voutsas, "Characterization of Advanced Excimer Laser Crystallized Polysilicon Tthin Film Transistors", Proc. 24^th International Conference on Microelectronics (MIEL‘04), Niš, May 2004 (pp. 697-700) ISBN 0-7803-8116-1, ISSN: 2159-1660, DOI: 10.1109/ICMEL.2004.1314926, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1314926

  
  

  S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, and N. Stojadinović, "Burn-in Stressing Effects on Post-Irradiation Annealing Response of Power VDMOSFETs", Proc. 24^th International Conference on Microelectronics (MIEL‘04), Niš, May 2004 (pp. 701-708) ISBN 0-7803-8116-1, ISSN: 2159-1660, DOI: 10.1109/ICMEL.2004.1314927, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1314927

  
  

  N. Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, and S. Dimitrijev, "Electrical Stressing Effects in Power VDMOSFETs", Proc. 7^th International Seminar on Power Semiconductors (ISPS’04), Prague, September 2004 (pp. 109-114)

  
  

  N. Stojadinović, "Effects of Electrical Stressing in Power VDMOSFETs", Proc. 1^st International Conference on Electrical and Electronic Engineering (ICEEE‘04), Acapulco (Mexico), September 2004 (invited paper), http://www.sciencedirect.com/science/article/pii/S0026271404003786

  
  

  D.N. Kouvatsos, V. Davidović, G.J. Papaioannou, N. Stojadinović, L. Michalas, M. Exarchos, A.T. Voutsas, and D.Goustouridis, "Effects of Hot Carrier and Irradiation Stresses on Advanced Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistors", Proc. 15^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘04), Zurich (Switzerland), October 2004, (pp. 1631-1636), also Microelectronics Reliability 2004, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2004.07.082, http://cat.inist.fr/?aModele=afficheN&cpsidt=16182745

  
  

  N. Stojadinović, D. Danković, S. Djorić-Veljković, V. Davidović, I. Manić, and S.Golubović "Negative Bias Temperature Instability Mechanisms in p-Channel Power VDMOSFETs" 16^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘05), Bordeaux (France), October 2005, (pp. 1343-1348), also Microelectronics Reliability 2005, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2005.07.018, http://www.sciencedirect.com/science/article/pii/S002627140500168X

  
  

  Lj.Vračar, N.Stojadinović, B. Pešić, "Computer as Powerful Tool in Reliability Testing of Thin Gate Dielectrics in MOS Devices", Proc. International Conference on Conputer as a Tool (IEE REGION 8 EUROCON‘05), Ljubljana (Slovenija), September 2005 (pp. 1159-1162) ISBN: 1-4244-0049-X, IDS Number: BEH17, http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=P2BN8ceokE1ebjBIoPF&page=3&doc=21

  
  

  I. Manić, S. Djorić-Veljković, V. Davidović, D. Danković, S. Golubović, and N. Stojadinović, "Spontaneous Recovery in DC gate Bias Stressed Power VDMOSFETs", Proc. 25^th International Conference on Microelectronics (MIEL‘06), Beograd, May 2006 (pp. 639-644) ISBN 1-4244-0116-X, ISSN: 2159-1660, Print ISBN: 1-4244-0117-8, DOI: 10.1109/ICMEL.2006.1651038, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1651038

  
  

  D. Danković, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, and N. Stojadinović, "Lifetime Estimation in NBT Stressed p-Channel Power VDMOSFETs", Proc. 25^th International Conference on Microelectronics (MIEL‘06), Beograd, May 2006 (pp.645-648) ISBN 1-4244-0116-X, ISSN: 2159-1660, Print ISBN: 1-4244-0117-8, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1651039

  
  

  V. Davidović, N. Stojadinović, D. Danković, S. Golubović, I. Manić, S. Djorić-Veljković, and S. Dimitrijev, "Turn-around of Threshold Voltage in Gate Bias Stressed p-Channel Power VDMOS Transistors", Proc. 8^th International Seminar on Power Semiconductors (ISPS‘06), Prague, September 2006 (pp. 85-89)

  
  

  D. Danković, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, and N. Stojadinović, "NBT Stress-Induced Degradation and Lifetime Estimation in p-Channel Power VDMOSFETs", Proc. 17^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘06), (Germany), October 2006 (pp. 1828-1833), also Microelectronics Reliability 2006, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2006.07.077, http://www.sciencedirect.com/science/article/pii/S0026271406002447

  
  

  N. Stojadinović, D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, and S. Golubović, "Impact of Negative Bias Temperature Instabilities on Lifetime in p-channel Power MOSFETs", Proc. 8^th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS‘07), Niš (Serbia), September 2007 (pp. 275-282) (invited paper)  ISBN: 978-86-85195-54-9 (IEEE), 1-4244-1467-9 (FEE), http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=W1Le4kG6KOb2mmPCDfL&page=2&doc=14

  
  

  D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, N. Stojadinović, "Negative Bias Temperature Instabilities in Sequentialy Stressed and Annealed in p-Channel Power VDMOSFETs", Proc. 18^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF ‘07), Bordeaux (France), October 2007 (pp. 1400-1405), also Microelectronics Reliability 2007, ISSN: 0026-2714, DOI:10.1016/j.microrel.2007.07.022, http://www.sciencedirect.com/science/article/pii/S0026271407002910

  
  

  V. Davidović, DN. Kouvatsos, N. Stojadinović and A.T. Voutsas, "Influence of Polysilicon Film Thickness on Radiation Rresponse of Advanced Excimer Laser Annealed Polycrystalline Thin Film Transistors", Proc. 18^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘07), Bordeaux (France), October 2007 (pp. 1841-1845), also Microelectronics Reliability 2007, ISSN: 0026-2714, DOI:10.1016/j.microrel.2007.07.025, http://www.sciencedirect.com/science/article/pii/S0026271407002958

  
  

  D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, and N. Stojadinović, "New Approach in Estimating the Lifetime in NBT Stressed p-Channel Power VDMOSFETs", Proc. 26^th International Conference on Microelectronics (MIEL‘08), Niš, May 2008 (pp. 599-602) ISBN: 987-1-4244-1881-7, ISSN: 2159-1660, DOI: 10.1109/ICMEL.2008.4559357, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4559357

  
  

  D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, and N. Stojadinović, "Negative Bias Temperature Sress and Annealing Effects in p-Channel Power VDMOSFETs", Proc. 9^th International Seminar on Power Semiconductors (ISPS‘08), Prague, August 2008 (pp. 127-132) ISBN 978-80-01-04139-0 DOI: 10.1049/ic:20080225, http://digital-library.theiet.org/getabs/servlet/GetabsServlet?prog=normal&id=IEESEM002008000002000127000001&idtype=cvips&gifs=yes&ref=no

  
  

  D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, and N. Stojadinović, "Negative Bias Temperature Instability in n-Channel Power VDMOSFETs", Proc. 19^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘08), Maastricht (Netherlands), September 2008 (pp. 1313-1317), also Microelectronics Reliability 2008, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2008.06.015, http://www.sciencedirect.com/science/article/pii/S0026271408002023

  
  

  E. Atanassova, N. Stojadinović, and A. Paskaleva, "Degradation Behaviour of T₂O₅ Stacks and its Dependence on the Gate Electrode", Proc. 19^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘08), Maastricht (Netherlands), September 2008 (pp. 1193-1197), also Microelectronics Reliability 2008, ISSN: 0026-2714, http://www.sciencedirect.com/science/article/pii/S0026271408001753

  
  

  I. Manić, D. Danković, S. Djorić-Veljković, V. Davidović, S. Golubović, and N. Stojadinović, "Effects of Low Gate Bias Annealing in NBT Stressed p-Channel Power VDMOSFETs", Proc. 20^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF’09), Arcachon, France, October 05-09 2009 (pp. 1003 - 1007), also Microelectronics Reliability2009, ISSN: 0026-2714, http://www.sciencedirect.com/science/article/pii/S0026271409002418

  
  

  S. Djorić-Veljković, D. Danković, A. Prijić, I. Manić, V. Davidović, S. Golubović, Z. Prijić, and N. Stojadinović, "Degradation of p-channel Power VDMOSFETs under Pulsed NBT Stress", Proc. 27^th International Conference on Microelectronics (MIEL‘10), Niš, May 2010 (pp. 443-446) ISBN 978-1-4244-7200-0, DOI: 10.1109/MIEL.2010.5490448, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5490448

  
  

  I. Manić, E. Atanassova, N. Stojadinović, and D. Spassov, "Effects of Constant Voltage Stress in Hf-doped Ta2O5 Stacks", Proc. 27^th International Conference on Microelectronics (MIEL‘10), Niš, May 2010 (pp. 483-486) ISBN 978-1-4244-7200-0, DOI: 10.1109/MIEL.2010.5490437, http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5490437

  
  

  I. Manić, D. Danković, S. Djorić-Veljković, A. Prijić, V. Davidović, S. Golubović, Z. Prijić, and N. Stojadinović, "Negative Bias Temperature Instability in p-Channel Power VDMOSFETs Under Pulsed Bias Stress", Proc. 10^th International. Seminar on Power Semiconductors (ISPS 2010), Prague (Czech Republic) September 2010, (pp. 173-178), ISBN 978-80-01-04602-9

  
  

  N. Stojadinović, D. Danković, I. Manić, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, Z. Prijić, "Threshold Voltage Instabilities in p-Channel Power VDMOSFETs Under Pulsed NBT Stress" Proc. 21^st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), Gaeta (Italy) October 2010, (pp. 1278-1282), also Microelectronics Reliability 2010, ISSN: 0026-2714, http://www.sciencedirect.com/science/article/pii/S0026271410003951

  
  

  I. Manić, D. Danković, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, and Z. Prijić, N. Stojadinović, "NBTI Related Degradation and Lifetime Estimation in p-Channel Power VDMOSFETs Under the Static and Pulsed NBT Stress Conditions", Proc. 22^nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2011), Bordeaux (France) 3-7 October 2011,(pp. 1540-1543), also Microelectronics Reliability 2011, ISSN: 0026-2714, http://www.sciencedirect.com/science/article/pii/S0026271411001946

  
  

  D. Danković, A. Prijić, I. Manić, Z. Prijić and N. Stojadinović “Measurements of Negative Bias Temperature Instability (NBTI) in p-channel Power VDMOSFETs”, Proc. 11^th International Seminar on Power Semiconductors (ISPS 2012), Prague (Czech Republic) August 2012, (pp. 240-245)

• Radovi na domaćim naučnim skupovima:

  N. Stojadinović i V. Cvekić, "Optimizacija tehnoloških parametara u varikap diodi sa superstrmim prelazom", Zbornik radova III Jugoslovenskog simpozijuma o mikroelektronici, (MIEL ‘75), Niš 1975 (pp. T.81-T88) 

  
  

  N. Stojadinović i V. Cvekić, "Projektovanje raspodele koncentracije primesa u varikap diodi sa superstrmim prelazom", Zbornik radova XIX Jugoslovenske konferencije za ETAN, Ohrid 1975 (II sveska, pp. 1281-1288) 

  
  

  N. Stojadinović i V. Cvekić, "Jedan nov, tačniji analitički izraz za raspodelu koncentracije primesa u varikap diodi sa superstrmim prelazom", Zbornik radova XI Jugoslovenskog simpozijuma o elektronskim sastavnim delovima i materijalima (SD ‘75), Ljubljana 1975 (pp. 105-111) 

  
  

  R. Popović i N. Stojadinović, "Eliminacija dislokacija na ivicama emitora planarnih NPN tranzistora depozicijom bornog stakla", Zbornik radova XX Jugoslovenske konferencije za ETAN, Opatija 1976 (II sveska, pp. 1335-1343)

  
  

  R. Popović, B. Vidanović, Lj. Ristić i N. Stojadinović, "Zavisnost probojnog napona i dinamičkog otpora nisko-naponskih Zener-dioda od tehnologije formiranja P-N spoja", Zbornik radova XX Jugoslovenske konferencije za ETAN, Opatija 1977 (II sveska, pp. 1361-1369)

  
  

  N. Stojadinović, Lj. Ristić i B. Vidanović, "Nova mogućnost za realizaciju nisko-naponskih Zener-dioda", Zbornik radova XXI Jugoslovenske konferencije za ETAN, Banja Luka 1977 (I sveska, pp. 285-292)

  
  

  N. Stojadinović, B. Vidanović i Lj. Ristić, "Aproksimativni izraz za plitke profile fosfora u silicijumu", Zbornik radova XIV Jugoslovenskog simpozijuma o elektronskim sastavnim delovima i materijalima (SD ‘87), Ljubljana 1978 (pp. 179-183)

  
  

  N. Stojadinović i R. Popović, "Nov tehnološki postupak za eliminaciju dislokacija na ivicama emitora planarnih NPN tranzistora", Zbornik radova XXIII Jugoslovenske konferencije za ETAN, Maribor 1979 (I sveska, pp. 331-338) 

  
  

  N. Stojadinović "Uslovi za formiranje dislokacija difuzijom fosfora u silicujumu", Zbornik radova XVI Jugoslovenskog simpozijuma o elektronskim sastavnim delovima i materijalima (SD ’80), Ljubljana 1980 (pp. 231-238) 

  
  

  N.D. Stojadinović, S.Ž. Mijalković i S.S. Dimitrijev, "Uticaj dislokacija izazvanih emitorskom difuzijom fosfora na inverznu struju N+-P spoja", Zbornik radova IX Jugoslovenskog simpozijuma o mikroelektronici (MIEL ‘81), Ljubljana 1981 (pp. 15-23)

  
  

  N. Stojadinović, E. Jelenković i S. Zdravković, "Uticaj dislokacija izazvanih emitorskom difuzijom fosfora na pouzdanost planarnih NPN tranzistora", Zbornik radova XXV Jugoslovenske konferencije za ETAN, Mostar 1981 (I sveska, pp. 425-432)

  
  

  N. Stojadinović i S. Ristić, "Uzroci otkaza integrisanih kola", Zbornik radova XVII Jugoslovenskog simpozijuma o elektronskim sastavnim delovima i materijalima (SD ‘81), Ljubljana 1981 (pp. 1-14) (rad po pozivu).

  
  

  N. Stojadinović, S. Mijalković i S. Dimitrijev, "Testne strukture za analizu pouzdanosti i uzroka otkaza u integrisanim kolima", Zbornik radova XVII Jugoslovenskog simpozijuma o elektronskim sastavnim delovima i materijalima (SD ‘81), Ljubljana 1981 (pp. 15-28) (rad po pozivu).

  
  

  N. Stojadinović, "Projektovanje integrisanih kola: modeliranje procesa", Zbornik radova X Jugoslovenskog simpozijuma o mikroelektronici  (MIEL ’82), Banja Luka 1982 (pp. 5-46) (rad po pozivu).

  
  

  N. Stojadinović, S. Mijalković i S. Dimitrijev, "Uticaj defekata pakovanja na inverznu struju P+-N spoja", Zbornik radova X Jugoslovenskog simpozijuma o mikroelektronici (MIEL ’82), Banja Luka 1982 (pp. 283-290)

  
  

  Z. Pavlović i N. Stojadinović, "Uticaj bočnog dela emitorskog spoja na temperaturnu zavisnost strujnog pojačanja tranzistora snage", Zbornik radova X Jugoslovenskog simpozijuma o mikroelektronici (MIEL ’82), Banja Luka 1982 (pp. 277-282) 

  
  

  N. Stojadinović, S. Dimitrijev, S. Mijalković i E. Jelenković, "Pouzdanost P-kanalnih MOS tranzistora u CMOS integrisanim kolima", Zbornik radova XXVI Jugoslovenske konferencije za ETAN, Subotica 1982 (I sveska, pp. 467-474)

  
  

  N. Stojadinović, Z. Pavlović i S. Milosavljević, "Uticaj bočnog dela emitorskog spoja na strujno pojačanje tranzistora snage", Zbornik radova XVIII Jugoslovenskog simpozijuma o elektronskim sastavnim delovima i materijalima (SD ‘82), Ljubljana 1982 (pp. 45-54)

  
  

  N. Stojadinović, S. Dimitrijev and Z. Živić, "Sudden Failures of CMOS Transistors", Zbornik radova XI Jugoslovenskog simpozijuma o mikroelektronici (MIEL ’83), Zagreb 1983 (pp. 419-426)

  
  

  N. Stojadinović, S. Dimitrijev, S. Mijalković i Z. Živić, "Nestabilnosti napona praga N-kanalnih i P-kanalnih MOS tranzistora u CMOS integrisanim kolima", Zbornik radova XXVII Jugoslovenske konferencije za ETAN, Struga 1983 (V sveska, pp. 299-306)

  
  

  Z. Pavlović, S. Milosavljević i N. Stojadinović, "Eksperimentalna analiza strujnog pojačanja tranzistora snage", Zbornik radova XXVII Jugoslovenske konferencije za ETAN, Struga 1983 (V sveska, pp. 243-249)

  
  

  Z. Živić i N. Stojadinović, "Pouzdanost i mehanizmi otkaza CMOS integrisanih kola realizovanih VDIN procesom", Zbornik radova XIX Jugoslovenskog simpozijuma o elektronskim sastavnim delovima i materijalima (SD ‘83), Ljubljana 1983 (pp. 101-109)

  
  

  N. Stojadinović, S. Dimitrijev and S. Mijalković, "Threshold Voltage Instabilities of CMOS Transistors Induced by Gate Bias Stress", Zbornik radova XII Jugoslovenskog simpozijuma o mikroelektronici (MIEL ‘84), Niš 1984 (pp. 94-103)

  
  

  N. Stojadinović, D. Dimitrijević i S. Pešanović, "Uticaj ubrzanog temperaturnog testiranja radnog veka na niskofrekventni šum bipolarnih tranzistora", Zbornik radova XII Jugoslovenskog simpozijuma o mikroelektronici (MIEL ‘84), Niš 1984 (pp. 105-111)

  
  

  S. Milosavljević, D. Dimitrijević, D. Janković i N. Stojadinović, "Otkazi bipolarnih tranzistora snage usled termičkog zamora", Zbornik radova XII Jugoslovenskog simpozijuma o mikroelektronici (MIE  ‘84), Niš 1984 (pp. 112-121)

  
  

  Lj. Ristić, Lj. Nikolić, M. Gušić i N. Stojadinović
  "Zavisnost probojnog napona dioda snage od tehnologije izrade P-N spoja", Zbornik radova XII Jugoslovenskog simpozijuma o mikroelektronici, (MIEL ‘84), Niš 1984 (pp. 263-270)

  
  

  N. Stojadinović i S. Dimitrijev, "Efekti elektrostatičkog pražnjenja kod mikroelektronskih komponenata", Zbornik radova I Srpskog simpozijuma iz primenjene elektrostatike, Niš 1984 (pp. 24.1-24.10)

  
  

  S. Dimitrijev and N. Stojadinović, "Instability Mechanisms of CMOS Integrated Circuits", Zbornik radova XIII Jugoslovenskog simpozijuma o mikroelektronici (MIEL ‘85), Ljubljana 1985 (pp. 575-582)

  
  

  N. Stojadinović i S. Dimitrijev, "Komponente MOS i CMOS integrisanih kola", Zbornik radova VIII Jugoslovenskog seminara o primeni mikroprocesora (MIPRO ‘85), Rijeka 1985 (pp. 2.1-2.33) (rad po pozivu)

  
  

  S. Dimitrijev, D. Župac i N. Stojadinović, "Metod za odredjivanje naelektrisanja kod MOS tranzistora", Zbornik radova II Srpskog simpozijuma iz primenjene elektrostatike, Niš 1986 (pp. 14.1-14.8)

  
  

  S. Mijalković, Z. Nikolić, D. Pantić, D. Radivojević, A. Živić, N. Stojadinović, "Praktični aspekti modeliranja tehnologije integrisanih kola programom SUPREM II", Zbornik radova XXII Jugoslovenskog simpozijuma o elektronskim sastavnim delovima i materijalima (SD’86), Otočec ob Krki 1986 (pp. 231-236)

  
  

  S. Dimitrijev, D. Župac, N. Stojadinović and N. Janković, "Effects of High Gate Oxide Field Stressing on Silicon-Gate CMOS Transistors", Zbornik radova XV Jugoslovenskog simpozijuma o mikroelektronici (MIEL ‘87), Banja Luka 1987 (pp. 445-454)

  
  

  S. Dimitrijev, D. Župac and N. Stojadinović, "An Improvement of Commonly Used Expression for Drain Current of MOS Transistors", Zbornik radova XV Jugoslovenskog simpozijuma o mikroelektronici (MIEL ‘87), Banja Luka 1987 (pp. 251-257)

  
  

  D. Pantić, S. Mijalković, N. Janković i N. Stojadinović, "Praktični aspekti modeliranja CMOS integrisanih kola programom MINIMOS", Zbornik radova XV Jugoslovenskog simpozijuma o mikroelektronici (MIEL ’87), Banja Luka 1987 (pp.235-241)

  
  

  N. Stojadinović i S. Dimitrijev, "Pouzdanost mikroelektronskih kola", Zbornik radova sa Simpozijuma o obezbedjenju kvaliteta (CEOK ’87), Ljubljana 1987 (pp.35-94) (rad po pozivu)

  
  

  S. Milošević i N. Stojadinović, "Novi način prikazivanja osobina bipolarnih tranzistora snage sa aspekta sekundarnog proboja", Zbornik radova XXXII Jugoslovenske konferencije za ETAN, Sarajevo 1988 (II sveska, pp. 99-105)

  
  

  Z. Stamenković, S. Dimitrijev and N. Stojadinović, "Calculation of Chip Critical Area for Yield Modeling", Zbornik radova XVIII Jugoslovenskog simpozijuma o mikroelektronici (MIEL ‘90), Ljubljana 1990 (pp. 133-136)

  
  

  Z.D. Prijić, T.K. Jovanović, S.S. Dimitrijev and N. D. Stojadinović, "Analysis of Transconductance Temperature Dependence in CMOS Transistors", Zbornik radova XVIII Jugoslovenskog simpozijuma o mikroelektronici (MIEL ‘90), Ljubljana 1990 (pp. 161-164)

  
  

  S. Milošević i N. Stojadinović, "Uticaj zračenja na poluprovodničke komponente: PN spoj i odgovarajuće vrste dioda", Zbornik radova XXXII Jugoslovenske konferencije za ETAN u pomorstvu, Zadar 1990

  
  

  S. Milošević i N. Stojadinović, "Uticaj zračenja na poluprovodničke komponente: bipolarni tranzistori", Zbornik radova XXXII Jugoslovenske konferencije za ETAN u pomorstvu, Zadar 1990

  
  

  C.J. Patel, N.D. Janković, N. Stojadinović and J. Butcher, "Lateral Lambda Bipolar Transistors as a Highly Sensitive Radiation Dosimeter", Proc. 19^th Yugoslav Conference on Microelectronics (MIEL ’91), Beograd 1991 (pp. 249-252)

  
  

  S. Mijalković, D. Pantić, Z. Prijić, S. Mitrović and N.Stojadinović, "2-D IC Fabrication Processes Simulator Based on a Multigrid Method", Proc. 19^th Yugoslav Conference on Microelectronics (MIEL ’91), Beograd 1991 (pp. 529-534)

  
  

  S. Mijalković, D. Pantić, Z. Prijić, S. Mitrović and N.Stojadinović, "MUSIC - A Multigrid Simulator for IC Fabrication Processes: Application", Proc. 19^th Yugoslav Conference on Microelectronics (MIEL ’91), Beograd 1991 (pp. 535-540)

  
  

  Z. Stamenković and N. Stojadinović, "Comparison of Defects Size Distribution Functions for Integrated Circuit Yield Modeling", Proc. 19^th Yugoslav Conference on Microelecronics (MIEL ’91), Beograd 1991 (pp. 541-546) 

  
  

  Z. Prijić, Z. Pavlović, S. Ristić i N. Stojadinović, "O postojanju tačke nultog temperaturnog koeficijenta kod VDMOS tranzistora snage", Zbornik XXXVI Konferencije ETAN-a (ETAN ’92), Kopaonik 1992 (pp. 77-85)

  
  

  Z. Pavlović, Z. Prijić, S. Ristić i N. Stojadinović, "Raspodela temperature u oblasti kanala MOS tranzistora snage", Zbornik radova XXXVI Konferencije ETAN-a (ETAN ’92), Kopaonik 1992 (pp. 63-68)

  
  

  S. Mitrović i N. Stojadinović, "Poredjenje jednomrežnih i višemrežnih tehnika za adaptivnu simulaciju procesa", Zbornik radova I Srpske konferencije o mikro i optoelektronici (MIOPEL ’92), Beograd 1992 (pp. 2.1.1-2.1.8)

  
  

  S. Golubović, G. Ristić. S. Djorić i N. Stojadinović, "Efekti gama-zračenja kod VDMOS tranzistora snage", Zbornik radova I Srpske konferencije o mikro i optoelektronici (MIOPEL ’92), Beograd 1992, (pp. 1.2.3.)

  
  

  D. Pantić, S. Mijalković and N. Stojadinović, "Efikasna simulacija procesa simultane difuzije tačkastih defekata i primesa adaptivnim multigrid metodom", Zbornik radova XXXVII konferencije ETAN-a (ETAN ’93), Beograd, Septembar 1993 (pp. 111-116)

  
  

  S. Mitrović, S. Mijalković and N. Stojadinović, "Efikasna simulacija procesa difuzije u proluprovodnicima metodom geometrijskog razdvajanja", Zbornik radova XXXVII konferencije ETAN-a (ETAN ’93), Beograd, Septembar 1993 (pp. 117-122)

  
  

  D. Pantić, S. Mijalković, S. Mitrović and N. Stojadinović, "The Efficient Simulation of Coupled Point Defect and Impurity Diffusion by an Adaptive Multigrid Method", Proc. 2^nd Serbian Conference on Microelectronics and Optoelectronics (MIOPEL ’93), Niš, October 1993 (pp. 169-178)

  
  

  N. Stojadinović, S. Djorić, S. Golubović and S. Dimitrijev, "Analysis of Gamma-Irradiation Induced Degradation Mechanisms in Power MOSFETs: Changes in Gate Oxide Charge and Interface Traps", Proc. 2^nd Serbian Conference on Microelectronics and Optoelectronics (MIOPEL ’93), Niš, October 1993 (pp. 67-72)

  
  

  S. Dimitrijev, S. Djorić, S. Golubović and N. Stojadinović, "Analysis of Gamma-Irradiation Induced Degradation Mechanisms in Power MOSFETs: Creation of Gate Oxide Charge and Interface Traps", Proc. 2^nd Serbian Conference on Microelectronics and Optoelectronics (MIOPEL ’93), Niš, October 1993 (pp. 73-79)

  
  

  T. Trajković, D. Pantić, Z. Prijić and N. Stojadinović, "Optimization of the Process Parameters for Power VDMOS Transistors’ Technology", Proc. 2^nd Serbian Conference on Microelectronics and Optoelectronics (MIOPEL ’93), Niš, October 1993 (pp. 197-202)

  
  

  S. Mitrović, S. Mijalković and N. Stojadinović, "A Method for Diffusion Simulation in Nonplanar Geometries Convenient for Implementation on Parallel Computers", Proc. 2^nd Serbian Conference on Microelectronics and Optoelectronics (MIOPEL ’93), Niš, October 1993 (pp. 191-195)

  
  

  Z. Pavlović, T. Jovanović, Z. Prijić, S. Ristić and N. Stojadinović, "Temperature Dependence of On-Resistance in Power VDMOS Transistors", Proc. 2^nd Serbian Conference on Microelectronics and Optoelectronics (MIOPEL ’93), Niš, October 1993 (pp. 87-92)

  
  

  S. Djorić-Veljković, S. Golubović, V. Davidović i N. Stojadinović, "Uticaj različitih naprezanja na formiranje latentnih defekata tokom spontanog oporavka VDMOS tranzistora snage", Zbornik radova XLIII jugoslovenske konferencije za ETRAN, Zlatibor, 20.‑22. septembar 1999, sveska IV (str. 139-1410)

  
  

  S. Djorić-Veljković, S. Golubović, V. Davidović and N. Stojadinović, "Efekti niskih temperatura kod VDMOS tranzistora snage", Zbornik radova XLIV jugoslovenske konferencije za ETRAN, Soko Banja, 26.‑29. jun 2000 (sveska IV str. 185-188)

  
  

  S. Djorić-Veljković, N. Stojadinović, I. Manić, V. Davidović, S. Golubović, "Uticaj temperaturno-naponskih testova pouzdanosti na efekte zračenja kod VDMOS tranzistora snage", Zbornik radova XLV jugoslovenske konferencije za ETRAN, Bukovička Banja, 04.‑07. jun 2001 (sveska IV str. 200-203)

  
  

  N. Stojadinović, I. Manić, S. Golubović, V. Davidović, S. Djorić-Veljković, S. Dimitrijev, "Efekti naprezanja pozitivnom polarizacijom na gejtu kod VDMOS tranzistora snage" Zbornik radova XLV jugoslovenske konferencije za ETRAN, Bukovička Banja, 4.‑7. jun 2001 (sveska IV str. 204-207)

  
  

  N. Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, "Uticaj električnog naprezanja na otpornost VDMOS tranzistora snage na zračenje", Zbornik radova XLVI jugoslovenske konferencije za ETRAN, Banja Vrućica (Republika Srpska), 3-6 jun 2002 (sveska IV str. 142-144)

  
  

  V. Davidović, S. Golubović, I. Manić, D. Danković, N. Stojadinović, S. Djorić-Veljković,  S. Dimitrijev, "Primena tehnika za razdvajanje efekata naelektrisanja u oksidu i površinskih stanja kod VDMOS tranzistora snage", Zbornik radova XLVI jugoslovenske konferencije za ETRAN, Banja Vrućica (Republika Srpska), 3-6 jun 2002 (sveska IV str. 145-148)

  
  

  I. Manić, V. Davidović, D. Danković, S. Golubović, N. Stojadinović, S. Djorić-Veljković, S. Dimitrijev, "Efekti naprezanja negativnom polarizacijom na gejtu kod VDMOS tranzistora snage", Zbornik radova XLVII jugoslovenske konferencije za ETRAN, Herceg Novi, 8-13 jun 2003 (sveska IV str. 183-186)

  
  

  S. Djorić-Veljković, N. Stojadinović, I. Manić, V. Davidović, S. Golubović, "Uticaj temperaturno-naponskih testova pouzdanosti na efekte odžarivanja kod ozračenih VDMOS tranzistora snage", Zbornik radova XLVII jugoslovenske konferencije za ETRAN, Herceg Novi, 8-13 jun 2003 (sveska IV str. 187-190)

  
  

  V. Davidović, N. Stojadinović, "Efekti naponskog naprezanja i jonizujućeg zračenja kod TFT MOS tranzistora", Zbornik radova XLVIII jugoslovenske konferencije za ETRAN, Čačak, 6-10 jun 2004 (sveska IV str. 121-124)

  
  

  V. Davidović, N. Stojadinović, D. Danković, S. Golubović, I. Manić, S. Djorić- Veljković, S. Dimitrijev, "Turn-around efekat napona praga kod PMOS tranzistora naprezanih pozitivnim naponima na gejtu", Zbornik radova XLIX konferencije za ETRAN, Budva, 05-10 jun 2005 (sveska IV str. 125-128)

  
  

  D. Danković, I. Manić, V. Davidović, S. Golubović, N. Stojadinović, S. Djorić-Veljković, "Nestabilnosti P-kanalnog VDMOS tranzistora snage usled naponsko-temperaturnih naprezanja sa negativnom polarizacijom gejta", Zbornik radova XLIX konferencije za ETRAN, Budva, 05-10 jun 2005 (sveska IV str. 129-132)

  
  

  I. Manić, D. Danković, N. Stojadinović, "NBT Nestabilnosti kod P- i N-kanalnog VDMOS tranzistora snage", Zbornik radova LII konferencije za ETRAN, Palić, 08-12 jun 2008 (str. MO1.1-1-4)

  
  

  D. Danković, I. Manić, V. Davidović, S. Golubović, N. Stojadinović, S. Djorić-Veljković, "Life Time Evaluation in p-channel Power VDMOSFETs Under NBT Stress", Zbornik radova LII konferencije za ETRAN, Palić, 08-12 jun 2008 (str. MO1.2-1-4)    NAGRAĐEN

  
  

  D. Danković, I. Manić, V. Davidović, S. Golubović, N. Stojadinović, S. Djorić-Veljković, "Instabilities in p-channel power VDMOSFETs Subjected to Multiple Negative Bias Temperature Stressing and Annealing", Zbornik radova LIII konferencije za ETRAN, Vrnjačka Banja, 15-18 jun 2009 (str. MO1.1-1-4)

  
  

  Dj. Kostadinović, D. Danković, I. Manić, V. Davidović, S. Golubović, N. Stojadinović, S. Djorić-Veljković, "Efekti spontanog oporavka kod p-kanalnih VDMOS tranzistora snage naprezanih jakim električnim poljem u oksidu gejta", Zbornik radova LIII konferencije za ETRAN, Vrnjačka Banja, 15-18 jun 2009 (str. MO1.2-1-4)

  
  

  D. Danković, A. Prijić, I. Manić, V. Davidović, S. Golubović, N. Stojadinović, Z. Prijić, S. Djorić-Veljković, “Instabilities in p-Channel Power VDMOSFETs Subjected to Pulsed Negative Bias Temperature Stressing”, Zbornik radova LIV konferencije za ETRAN, Donji Milanovac, 7-10. jun 2010 (str. MO1.1-1-4)

  
  

  I. Manić, N. Stojadinović, E. Atanassova, D. Spassov, “Constant Voltage Stressing of Hf-Doped Ta₂O₅ Stacks”, Zbornik radova LIV konferencije za ETRAN, Donji Milanovac, 7-10. jun 2010 (str. MO1.2-1-4)

  
  

  D. Danković, V. Sinadinović, D. Milošević, Z. Prijić “Realizacija “inteligentnog” semafora na bazi Nanoboard-a 3000”, Zbornik radova 8. simpozijuma za industrijsku elektroniku (INDEL 2010), Banja Luka (Republika Srpska), 4-6 Novembar 2010, str.120-124.

  
  

  D. Danković, A. Prijić, I. Manić, V. Davidović, S. Golubović, Z. Prijić, N. Stojadinović, S. Đorić-Veljković “Određivanje perioda pouzdanog rada p-kanalnih VDMOS tranzistora snage podvrgnutih kontinualnim i impulsnim NBT naprezanjima”, Zbornik radova LVI konferencije za ETRAN, Zlatibor, 11-14 Jun 2012, str. MO1.1-1-4.

  
  

  I. Manić, D. Danković, N. Stojadinović, “Modelovanje napona praga p-kanalnih VDMOS tranzistora snage tokom naponsko temperaturnih naprezanja i odžarivanja”, Zbornik radova LVI konferencije za ETRAN, Zlatibor, 11-14 Jun 2012, str. MO1.2-1-4.

  
  

  D. Danković, A. Prijić, I. Manić, Z. Prijić, N. Stojadinović, Naponsko temperaturna naprezanja p-kanalnih VDMOS tranzistora snage“, Zbornik radova LVII konferencije za ETRAN, Zlatibor, 3-6. jun 2013 (str. MO1.1-1-5) NAGRAĐEN http://etran.etf.rs/etran2013/Radovi/MO/MO1.1%20Dankovic%20Prijic%20Manic%20Prijic%20Stojadinovic%202013.pdf     

  
  

  d.78    S. Djorić-Veljković, I. Manić,  V. Davidović, D. Danković, S. Golubović, N. Stojadinović, “Uticaj odžarivanja na oporavak električno naprezanih VDMOS tranzistora snage”, Zbornik radova LVII konferencije za ETRAN, Zlatibor, 3-6. jun 2013 (str. MO1.2-1-6) NAGRAĐEN http://etran.etf.rs/etran2013/Radovi/MO/MO1.2%20Djoric%20Manic%20Davidovic%20Dankovic%20Golubovic %20Stojadinovic%202013.pdf